PROPERTIES OF EPITAXIAL BA-HEXAFERRITE THIN-FILMS ON A-PLANE, R-PLANE, AND C-PLANE ORIENTED SAPPHIRE SUBSTRATES

被引:21
作者
HYLTON, TL
PARKER, MA
COFFEY, KR
HOWARD, JK
机构
[1] IBM, Advanced Storage and Retrieval, San Jose, CA 95193
关键词
D O I
10.1063/1.354065
中图分类号
O59 [应用物理学];
学科分类号
摘要
Thin films of Ba-hexaferrite of the magnetoplumbite structure have been prepared on sapphire substrates of orientation (1120BAR), (1102BAR), and (0001BAR). Torque magnetometry indicates easy axes parallel, tilted off parallel, and perpendicular to the substrate for the A-, R-, and C-plane substrates. X-ray diffraction shows that this is due to epitaxy between the Ba-ferrite and sapphire. For each substrate orientation, the c axes of the Ba-hexaferrite and sapphire are parallel and the directions of close packing in the close-packed oxygen planes perpendicular to the c axes are parallel. Torque measurements are consistent with the combined effects of crystal and shape anisotropy. These results suggest that Ba-hexaferrite thin films with an easy axis at any angle with respect to the substrate can be prepared by appropriate choice of the sapphire substrate orientation, which may be of interest for microwave and other applications.
引用
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页码:6257 / 6259
页数:3
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