CURRENT CROWDING ON METAL CONTACTS TO PLANAR DEVICES

被引：164

作者：

MURRMANN, H

WIDMANN, D

机构：

[1] Siemens Aktiengesellschaft, München

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1969年 / ED16卷 / 12期

关键词：

D O I：

10.1109/T-ED.1969.16904

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A simple transmission line model is applied to the contact region between metal and diffusion layer in planar devices. Taking into account the sheet resistance of the diffusion layer and an ohmic specific contact resistance between metal and semiconductor the theoretical current distribution across the contact is calculated and compared with the results obtained with a model suggested by Kennedy and-Murley. Experimental data are given that confirm the validity of the transmission line model. Copyright © 1969 by The Institute of Electrical and Electronics Engrneers, Inc.

引用

页码：1022 / &