SUBTHRESHOLD CURRENT IN GAAS-MESFETS

被引：16

作者：

CONGER, J ^{[1
]}

PECZALSKI, A ^{[1
]}

SHUR, MS ^{[1
]}

机构：

[1] UNIV MINNESOTA,DEPT ELECT ENGN,MINNEAPOLIS,MN 55455

来源：

IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 03期

关键词：

SEMICONDUCTING GALLIUM ARSENIDE - SEMICONDUCTOR DEVICES; FIELD EFFECT - Mathematical Models;

D O I：

10.1109/55.2064

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors present experimental data that show that the drain-to-source voltage dependence of the subthreshold current in GaAs MESFETs is determined by the variation of threshold voltage with drain-source voltage and not by Schottky-barrier lowering. This model, incorporating gate-to-drain and gate-to-source diode currents, is shown to be in good agreement with measured data. The model is incorporated into a GaAs circuit simulator and is suitable for GaAs IC design.

引用

页码：128 / 129

页数：2