A SUBTHRESHOLD CURRENT MODEL FOR GAAS-MESFETS

[1] CHEN TH, 1985, IEEE T ELECTRON DEV, V32, P18, DOI 10.1109/T-ED.1985.21903

[2] A MESFET MODEL FOR USE IN THE DESIGN OF GAAS INTEGRATED-CIRCUITS [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1980, 28 (05) : 448 - 456

[3] Darley H. M., 1980, International Electron Devices Meeting. Technical Digest, P34

[4] A SPICE MODELING TECHNIQUE FOR GAAS-MESFET ICS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (05) : 996 - 998

[5] A HIGH-SPEED LSI GAAS 8BY8-BIT PARALLEL MULTIPLIER [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1982, 17 (04) : 638 - 647

[6] MCLEVIGE WV, 1985, NOV IEEE GAAS INT CI, P203

[7] SZE SM, 1981, PHYSICS SEMICONDUCTO, P253

[8] VLSI LIMITATIONS FROM DRAIN-INDUCED BARRIER LOWERING [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (02) : 383 - 391

[9] VANTUYL R, 1977, IEEE J SOLID STATE C, V9, P269

[10] WATSON HA, 1969, MICROWAVE SEMICONDUC, pCH13

[1] CHEN TH, 1985, IEEE T ELECTRON DEV, V32, P18, DOI 10.1109/T-ED.1985.21903

[2] A MESFET MODEL FOR USE IN THE DESIGN OF GAAS INTEGRATED-CIRCUITS [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1980, 28 (05) : 448 - 456

[3] Darley H. M., 1980, International Electron Devices Meeting. Technical Digest, P34

[4] A SPICE MODELING TECHNIQUE FOR GAAS-MESFET ICS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (05) : 996 - 998

[5] A HIGH-SPEED LSI GAAS 8BY8-BIT PARALLEL MULTIPLIER [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1982, 17 (04) : 638 - 647

[6] MCLEVIGE WV, 1985, NOV IEEE GAAS INT CI, P203

[7] SZE SM, 1981, PHYSICS SEMICONDUCTO, P253

[8] VLSI LIMITATIONS FROM DRAIN-INDUCED BARRIER LOWERING [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (02) : 383 - 391

[9] VANTUYL R, 1977, IEEE J SOLID STATE C, V9, P269

[10] WATSON HA, 1969, MICROWAVE SEMICONDUC, pCH13