A SPICE MODELING TECHNIQUE FOR GAAS-MESFET ICS

被引：9

作者：

HUANG, CI ^{[1
]}

THORBJORNSEN, AR ^{[1
]}

机构：

[1] UNIV TOLEDO,DEPT ELECT ENGN,TOLEDO,OH 43606

来源：

关键词：

D O I：

10.1109/T-ED.1985.22060

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：996 / 998

页数：3

共 9 条

[1] THE EFFECT OF PARASITIC CAPACITANCES ON THE CIRCUIT SPEED OF GAAS-MESFET RING OSCILLATORS
CHANG, CTM
NAMORDI, MR
WHITE, WA
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (11) : 1805 - 1809
[2] CHUA LO, 1975, COMPUTER AIDED ANAL, P218
[3] A MESFET MODEL FOR USE IN THE DESIGN OF GAAS INTEGRATED-CIRCUITS
CURTICE, WR
[J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1980, 28 (05) : 448 - 456
[4] DOGANIS K, 1982, SUXES STANFORD U EXT
[5] GREILING PT, 1982, AFWALTR821135 AIR FO
[6] COMPACT DC MODEL OF GAAS-FETS FOR LARGE-SIGNAL COMPUTER CALCULATION
KACPRZAK, T
MATERKA, A
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1983, 18 (02) : 211 - 213
[7] NAGEL LW, 1975, ERLM520 U CAL EL RES
[8] Ward D. E., 1982, IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, VCAD-1, P163, DOI 10.1109/TCAD.1982.1270007
[9] YANG P, 1982, IEEE T COMPUT AID D, V1, P169