A MESFET MODEL FOR USE IN THE DESIGN OF GAAS INTEGRATED-CIRCUITS

被引：288

作者：

CURTICE, WR

机构：

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1980年 / 28卷 / 05期

关键词：

D O I：

10.1109/TMTT.1980.1130099

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：448 / 456

页数：9

共 24 条

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[3] ANALYSIS OF PROPERTIES OF 3-TERMINAL TRANSFERRED-ELECTRON LOGIC DEVICES [J].

CURTICE, WR .

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[4]

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[5]

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[6] DETERMINATION OF THE BASIC DEVICE PARAMETERS OF A GAAS-MESFET [J].

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BELL SYSTEM TECHNICAL JOURNAL, 1979, 58 (03) :771-797

[7] EFFECT OF SMALL TRANSVERSE DIMENSIONS ON OPERATION OF GUNN DEVICES [J].

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[8]

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[9]

Madjar A., 1979, 1979 IEEE MTT-S International Microwave Symposium Digest, P399

[10]

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