GAAS DUAL-GATE SCHOTTKY-BARRIER FETS FOR MICROWAVE-FREQUENCIES

被引：30

作者：

ASAI, S ^{[1
]}

MURAI, F ^{[1
]}

KODERA, H ^{[1
]}

机构：

[1] HITACHI LTD,CENT RES LAB,KOKUBUNJI,TOKYO,JAPAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1975年 / 22卷 / 10期

关键词：

D O I：

10.1109/T-ED.1975.18239

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：897 / 904

页数：8

共 15 条

[1]

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[2]

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[3]

ASAI S, TO BE PUBLISHED

[4]

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[5] SI AND GAAS 0.5 MUM-GATE SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTORS [J].

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DAETWYLE.K ;

FORSTER, T ;

MOHR, TO ;

WALTER, W ;

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ELECTRONICS LETTERS, 1973, 9 (10) :232-234

[6] X-BAND AND KU-BAND AMPLIFIERS WITH GAAS SCHOTTKY-BARRIERS FIELD-EFFECT TRANSISTORS [J].

BAECHTOLD, W .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1973, SC 8 (01) :54-58

[7] GENERAL THEORY FOR PINCHED OPERATION OF JUNCTION-GATE FET [J].

GREBENE, AB ;

GHANDHI, SK .

SOLID-STATE ELECTRONICS, 1969, 12 (07) :573-+

[8] AN EPITAXIAL GAAS FIELD-EFFECT TRANSISTOR [J].

HOOPER, WW ;

LEHRER, WI .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (07) :1237-&

[9] VOLGATE-CURRENT CHARACTERISTICS OF GAAS J-FETS IN HOT ELECTRON RANGE [J].

LEHOVEC, K ;

ZULEEG, R .

SOLID-STATE ELECTRONICS, 1970, 13 (10) :1415-&

[10]

LIECHTI CA, 1973, ISSCC DIG TECH PAPER, P74

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