GAAS DUAL-GATE SCHOTTKY-BARRIER FETS FOR MICROWAVE-FREQUENCIES

被引：30

作者：

ASAI, S ^{[1
]}

MURAI, F ^{[1
]}

KODERA, H ^{[1
]}

机构：

[1] HITACHI LTD,CENT RES LAB,KOKUBUNJI,TOKYO,JAPAN

来源：

关键词：

D O I：

10.1109/T-ED.1975.18239

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：897 / 904

页数：8

共 15 条

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MEAD, CA .

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MURRMANN, H ;

WIDMANN, D .

[13] FIELD-DEPENDENT MOBILITY ANALYSIS OF FIELD-EFFECT TRANSISTOR [J].

TROFIMENKOFF, FN .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (11) :1765-+

[14] DUAL-GATE GALLIUM-ARSENIDE MICROWAVE FIELD-EFFECT TRANSISTOR [J].

TURNER, JA ;

WALLER, AJ ;

KELLY, E ;

PARKER, D .

[15]

TURNER JA, 1972, MICROWAVES, V11, P44