MEASUREMENT OF CONTACT RESISTANCE BETWEEN METAL AND DIFFUSION LAYER IN SI PLANAR ELEMENTS

被引：47

作者：

MURRMANN, H

WIDMANN, D

机构：

[1] Siemens AG, Werk für Halbleiter, München

来源：

SOLID-STATE ELECTRONICS | 1969年 / 12卷 / 11期

关键词：

D O I：

10.1016/0038-1101(69)90045-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A structure is described for the measurement of contact-resistance between metal and diffusion-layer in Si planar-elements. Basic considerations and mathematical analysis for linear and concentric arrangement of contacts are presented with first experimental results. © 1969.

引用

页码：879 / &