CHARACTERIZATION OF EPITAXIALLY GROWN CEO2(110) LAYERS ON SI BY MEANS OF SHADOWING PATTERN IMAGING WITH FAST-ION BEAMS

被引：11

作者：

INOUE, T

KUDO, H

FUKUSHO, T

ISHIHARA, T

OHSUNA, T

机构：

[1] UNIV TSUKUBA,INST APPL PHYS,TSUKUBA,IBARAKI 305,JAPAN

[2] UNIV TSUKUBA,CTR TANDEM ACCELERATOR,TSUKUBA,IBARAKI 305,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1994年 / 33卷 / 1B期

关键词：

CERIUM DIOXIDE; SILICON; HETEROEPITAXY; DOUBLE-DOMAIN STRUCTURE; ION BEAM ANALYSIS; CHANNELING; ION BEAM SHADOWING; SECONDARY ELECTRON;

D O I：

10.1143/JJAP.33.L139

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Shadowing pattern imaging using keV secondary electrons induced by 56 MeV O8+ ions has been applied to investigate the texture structure of epitaxially grown CeO2(100) layers on Si(100) substrates. The observed shadowing pattern is characteristic of the crystal with a domain structure, i. e., a clear (110) axial image and smeared planar images, which result from the overlapping of two kinds of planar patterns (one is rotated 90 degrees from the other around the (110) axis). The results are consistent with the observations by high-resolution secondary electron microscopy and reflection high-energy electron diffraction.

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页码：L139 / L142

页数：4

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