DARK STATES IN COHERENT SEMICONDUCTOR SPECTROSCOPY

被引：69

作者：

LINDBERG, M ^{[1
]}

BINDER, R ^{[1
]}

机构：

[1] UNIV ARIZONA, CTR OPT SCI, TUCSON, AZ 85721 USA

来源：

PHYSICAL REVIEW LETTERS | 1995年 / 75卷 / 07期

关键词：

D O I：

10.1103/PhysRevLett.75.1403

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The possibility of creating dark states (a concept well known in atomic systems) in semiconductors is discussed. Based on the semiconductor Bloch equations, the analysis shows that, in spite of complications due to band-structure and strong excitonic many-body effects, signatures of dark states should be observable in femtosecond nonlinear optical excitation experiments.

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页码：1403 / 1406

页数：4

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