THEORETICAL INVESTIGATION OF GAIN ENHANCEMENTS IN STRAINED IN0.35GA0.65AS/GAAS MQW LASERS VIA P-DOPING

被引：9

作者：

SCHONFELDER, A

WEISSER, S

ESQUIVIAS, I

RALSTON, JD

ROSENZWEIG, J

机构：

[1] FRAUNHOFER INST APPL SOLID STATE PHYS,D-79108 FREIBURG,GERMANY

[2] UNIV POLITECN MADRID,DEPT TECNOL ELECTRON,MADRID,SPAIN

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1994年 / 6卷 / 04期

关键词：

D O I：

10.1109/68.281800

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a systematic theoretical investigation of the influence of p-doping on the gain characteristics of strained In0.35Ga0.65As/GaAs multiple-quantum-well (MQW) lasers, and compare the results with those obtained experimentally from devices with record 30 GHz modulation bandwidths. Experimentally, the combination of p-doping and strain has been found to lead to only a small increase in the differential gain, partial derivative g/dn but a large decrease in the non-linear gain coefficient, epsilon; this behaviour has been theoretically accounted for by a doping-induced decrease in the intraband relaxation time, tau(in). The theoretical investigations reveal that the assumption of a constant intraband relaxation time is not sufficient to describe the role of p-doping in the above devices, and highlight the importance of utilizing an appropriate lineshape function for the modelling of high speed laser modulation behaviour.

引用

页码：475 / 478

页数：4

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