25 GHZ BANDWIDTH 1.55-MU-M GAINASP P-DOPED STRAINED MULTIQUANTUM-WELL LASERS

被引：81

作者：

MORTON, PA

LOGAN, RA

TANBUNEK, T

SCIORTINO, PF

SERGENT, AM

MONTGOMERY, RK

LEE, BT

机构：

[1] AT&T Bell Laboratories, Murray Hill, NJ 07974

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 23期

关键词：

QUANTUM WELL LASERS; MODULATION BANDWIDTH;

D O I：

10.1049/el:19921384

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A modulation bandwidth of 25 GHz for InP based lasers, using devices with p-doped, strained multiquantum-well active regions is reported. The doping reduces the bandwidth limitations caused by hole transport in standard quantum-well lasers, as well as increasing resonance frequencies to over 30 GHz. The present 25 GHz bandwidth is limited by device parasitics, with a predicted intrinsic device bandwidth of over 40 GHz.

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页码：2156 / 2157

页数：2

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