HIGH-SPEED INGAASP/INP MULTIPLE-QUANTUM-WELL LASER

被引:16
作者
LIPSANEN, H
COBLENTZ, DL
LOGAN, RA
YADVISH, RD
MORTON, PA
TEMKIN, H
机构
[1] AT&T Bell Laboratories, Murray Hill
关键词
D O I
10.1109/68.145234
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We describe practical high-speed InGaAsP/InP lasers based on compressively strained quantum wells. Buried heterostructure lasers with threshold currents of 10 mA and slope efficiencies of 0.23 mW/mA are used. A modulation bandwidth of 20 GHz is obtained at a low drive current of 90 mA. A K factor of 0.25 ns is obtained and the intrinsic bandwidth of these lasers is estimated at 35 GHz.
引用
收藏
页码:673 / 675
页数:3
相关论文
共 11 条
[1]   EFFECT OF STRAIN ON THE RESONANT-FREQUENCY AND DAMPING FACTOR IN INGAAS/INP MULTIPLE QUANTUM-WELL LASERS [J].
FUKUSHIMA, T ;
BOWERS, JE ;
LOGAN, RA ;
TANBUNEK, T ;
TEMKIN, H .
APPLIED PHYSICS LETTERS, 1991, 58 (12) :1244-1246
[2]   WIDE BANDWIDTH MULTIPLE QUANTUM-WELL 1.55 MU-M LASERS [J].
LEALMAN, IF ;
BAGLEY, M ;
COOPER, DM ;
FLETCHER, N ;
HARLOW, M ;
PERRIN, SD ;
WALLING, RH ;
WESTBROOK, LD .
ELECTRONICS LETTERS, 1991, 27 (13) :1191-1192
[3]   EXTREMELY HIGH-FREQUENCY (24 GHZ) INGAASP DIODE-LASERS WITH EXCELLENT MODULATION EFFICIENCY [J].
MELAND, E ;
HOLMSTROM, R ;
SCHLAFER, J ;
LAUER, RB ;
POWAZINIK, W .
ELECTRONICS LETTERS, 1990, 26 (21) :1827-1829
[4]   FREQUENCY-RESPONSE SUBTRACTION FOR SIMPLE MEASUREMENT OF INTRINSIC LASER DYNAMIC PROPERTIES [J].
MORTON, PA ;
TANBUNEK, T ;
LOGAN, RA ;
SERGENT, AM ;
SCIORTINO, PF ;
COBLENTZ, DL .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1992, 4 (02) :133-136
[5]  
MORTON PA, IN PRESS ENHANCED MO
[6]   FREQUENCY-RESPONSE OF 1.3-MU-M INGAASP HIGH-SPEED SEMICONDUCTOR-LASERS [J].
OLSHANSKY, R ;
HILL, P ;
LANZISERA, V ;
POWAZINIK, W .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1987, 23 (09) :1410-1418
[7]   EXTREMELY WIDE MODULATION BANDWIDTH IN A LOW THRESHOLD CURRENT STRAINED QUANTUM WELL LASER [J].
SUEMUNE, I ;
COLDREN, LA ;
YAMANISHI, M ;
KAN, Y .
APPLIED PHYSICS LETTERS, 1988, 53 (15) :1378-1380
[8]   FREQUENCY-RESPONSE AND DIFFERENTIAL GAIN IN STRAINED AND UNSTRAINED INGAAS/INGAASP QUANTUM-WELL LASERS [J].
TATHAM, MC ;
SELTZER, CP ;
PERRIN, SD ;
COOPER, DM .
ELECTRONICS LETTERS, 1991, 27 (14) :1278-1280
[9]  
TEMKIN H, UNPUB
[10]   HIGH-RESOLUTION X-RAY-DIFFRACTION STUDIES OF INGAAS(P)/INP SUPERLATTICES GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY [J].
VANDENBERG, JM ;
HAMM, RA ;
PANISH, MB ;
TEMKIN, H .
JOURNAL OF APPLIED PHYSICS, 1987, 62 (04) :1278-1283