EXTREMELY WIDE MODULATION BANDWIDTH IN A LOW THRESHOLD CURRENT STRAINED QUANTUM WELL LASER

被引：177

作者：

SUEMUNE, I

COLDREN, LA

YAMANISHI, M

KAN, Y

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 15期

关键词：

D O I：

10.1063/1.99984

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1378 / 1380

页数：3

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共 22 条

[1] BAND-STRUCTURE ENGINEERING FOR LOW-THRESHOLD HIGH-EFFICIENCY SEMICONDUCTOR-LASERS
ADAMS, AR
[J]. ELECTRONICS LETTERS, 1986, 22 (05) : 249 - 250
[2] QUANTUM-WELL LASERS GAIN, SPECTRA, DYNAMICS
ARAKAWA, Y
YARIV, A
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (09) : 1887 - 1899
[3] CASEY HC, 1978, HETEROSTRUCTURE LASE, pCH3
[4] MODIFICATION OF OPTICAL-PROPERTIES OF GAAS-GA1-XALXAS SUPER-LATTICES DUE TO BAND MIXING
CHANG, YC
SCHULMAN, JN
[J]. APPLIED PHYSICS LETTERS, 1983, 43 (06) : 536 - 538
[5] FASOLINO A, 1984, 2 DIMENSIONAL SYSTEM, P176
[6] RIDGE WAVE-GUIDE INJECTION-LASER WITH A GALNAS STRAINED-LAYER QUANTUM-WELL (LAMBDA=1-MU-M)
FISCHER, SE
FEKETE, D
FEAK, GB
BALLANTYNE, JM
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (12) : 714 - 716
[7] CONTROVERSY OF CRITICAL LAYER THICKNESS FOR INGAAS/GAAS STRAINED-LAYER EPITAXY
GOURLEY, PL
FRITZ, IJ
DAWSON, LR
[J]. APPLIED PHYSICS LETTERS, 1988, 52 (05) : 377 - 379
[8] Harrison W. A., 1980, ELECT STRUCTURE PROP
[9] HESS K, 1976, 13TH P INT C PHYS SE, P142
[10] LAU KY, 1985, IEEE J QUANTUM ELECT, V21, P121