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FREQUENCY-RESPONSE AND DIFFERENTIAL GAIN IN STRAINED AND UNSTRAINED INGAAS/INGAASP QUANTUM-WELL LASERS

被引：23
作者：
TATHAM, MC
SELTZER, CP
PERRIN, SD
COOPER, DM
机构：
[1] BT Laboratories
来源：
ELECTRONICS LETTERS | 1991年 / 27卷 / 14期
关键词：
SEMICONDUCTOR LASERS; LASERS;
D O I：
10.1049/el:19910801
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A systematic investigation is presented into the frequency response and differential gain in both strained and unstrained InGaAs/InGaAsP 1.5-mu-m quantum well lasers. Both the differential gain and damping in strained devices were found to be similar in magnitude to comparable unstrained devices. In addition, the differential gain was found to increase and the damping to decrease with increasing numbers of quantum wells.
引用
收藏
页码：1278 / 1280
页数：3
相关论文
共 6 条
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