TITANIUM NITRIDE LOCAL INTERCONNECT TECHNOLOGY FOR VLSI

被引：30

作者：

TANG, TE

WEI, CC

HAKEN, RA

HOLLOWAY, TC

HITE, LR

BLAKE, TGW

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1987年 / 34卷 / 03期

关键词：

D O I：

10.1109/T-ED.1987.22980

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：682 / 688

页数：7

共 11 条

[1] FORMATION OF TISI2 AND TIN DURING NITROGEN ANNEALING OF MAGNETRON SPUTTERED TI FILMS [J].

ADAMS, ED ;

AHN, KY ;

BRODSKY, SB .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (06) :2264-2267

[2] DEVELOPMENT OF THE SELF-ALIGNED TITANIUM SILICIDE PROCESS FOR VLSI APPLICATIONS [J].

ALPERIN, ME ;

HOLLAWAY, TC ;

HAKEN, RA ;

GOSMEYER, CD ;

KARNAUGH, RV ;

PARMANTIE, WD .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (02) :141-149

[3]

CHEN DC, 1984, DEC IEEE IEDM SAN FR, P118

[4]

KUDOH O, 1984, DEC IEDM, P67

[5]

LAU CK, 1982, DEC IEDM, P714

[6]

LAU CK, 1983, ECS DIG EXT ABSTR, V83, P569

[7]

Okamoto T., 1986, 1986 Symposium on VLSI Technology. Digest of Technical Papers, P51

[8]

OKAZAKI N, 1986, FEB ISSCC, P204

[9]

PRAMANIK D, 1985, SEMICONDUCTOR IN MAY, P94

[10]

TANG TE, 1985, DEC IEDM, P590

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