DEVELOPMENT OF THE SELF-ALIGNED TITANIUM SILICIDE PROCESS FOR VLSI APPLICATIONS

被引：130

作者：

ALPERIN, ME ^{[1
]}

HOLLAWAY, TC ^{[1
]}

HAKEN, RA ^{[1
]}

GOSMEYER, CD ^{[1
]}

KARNAUGH, RV ^{[1
]}

PARMANTIE, WD ^{[1
]}

机构：

[1] TEXAS INSTRUMENTS INC,CTR SEMICOND PROC & DESIGN,DALLAS,TX 75265

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1985年 / 32卷 / 02期

关键词：

D O I：

10.1109/T-ED.1985.21923

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：141 / 149

页数：9

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[2]

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LAU CK, 1983, MAY ECS, V83, P569

[5]

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[6]

MCQUILLAN A, 1956, TITANIUM, P415

[7]

MERCHANT P, 1984, MAY WORKSH REFR MET, V2

[8]

MOHSEN A, 1984, MAY WORKSH REFR MET, V2

[9] SILICIDE FORMATION IN THIN COSPUTTERED (TANTALUM + SILICON) FILMS ON POLYCRYSTALLINE SILICON AND SIO2 [J].

MURARKA, SP ;

FRASER, DB .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (03) :1593-1598

[10] REFRACTORY SILICIDES FOR INTEGRATED-CIRCUITS [J].

MURARKA, SP .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (04) :775-792

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