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A SILICON INTEGRATED CIRCUIT FORCE SENSOR
被引:8
作者
:
FULKERSON, DE
论文数:
0
引用数:
0
h-index:
0
机构:
Solid State Electronics Center, Honey-well Inc., Hopkins
FULKERSON, DE
机构
:
[1]
Solid State Electronics Center, Honey-well Inc., Hopkins
来源
:
IEEE TRANSACTIONS ON ELECTRON DEVICES
|
1969年
/ ED16卷
/ 10期
关键词
:
D O I
:
10.1109/T-ED.1969.16871
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
A piezoresistive bridge and integrated circuit amplifier can be made in the same silicon cantilever. The purpose of the amplifier is to linearize as well as amplify the output. © 1969 IEEE. All rights reserved.
引用
收藏
页码:867 / +
页数:1
相关论文
共 3 条
[1]
KELLER HW, PRIVATE COMMUNICATIO
[2]
SEMICONDUCTING STRESS TRANSDUCERS UTILIZING TRANSVERSE AND SHEAR PIEZORESISTANCE EFFECTS
[J].
PFANN, WG
论文数:
0
引用数:
0
h-index:
0
PFANN, WG
;
THURSTON, RN
论文数:
0
引用数:
0
h-index:
0
THURSTON, RN
.
JOURNAL OF APPLIED PHYSICS,
1961,
32
(10)
:2008
-&
[3]
PIEZORESISTIVE PROPERTIES OF SILICON DIFFUSED LAYERS
[J].
TUFTE, ON
论文数:
0
引用数:
0
h-index:
0
TUFTE, ON
;
STELZER, EL
论文数:
0
引用数:
0
h-index:
0
STELZER, EL
.
JOURNAL OF APPLIED PHYSICS,
1963,
34
(02)
:313
-&
←
1
→
共 3 条
[1]
KELLER HW, PRIVATE COMMUNICATIO
[2]
SEMICONDUCTING STRESS TRANSDUCERS UTILIZING TRANSVERSE AND SHEAR PIEZORESISTANCE EFFECTS
[J].
PFANN, WG
论文数:
0
引用数:
0
h-index:
0
PFANN, WG
;
THURSTON, RN
论文数:
0
引用数:
0
h-index:
0
THURSTON, RN
.
JOURNAL OF APPLIED PHYSICS,
1961,
32
(10)
:2008
-&
[3]
PIEZORESISTIVE PROPERTIES OF SILICON DIFFUSED LAYERS
[J].
TUFTE, ON
论文数:
0
引用数:
0
h-index:
0
TUFTE, ON
;
STELZER, EL
论文数:
0
引用数:
0
h-index:
0
STELZER, EL
.
JOURNAL OF APPLIED PHYSICS,
1963,
34
(02)
:313
-&
←
1
→