A SILICON INTEGRATED CIRCUIT FORCE SENSOR

被引:8
作者
FULKERSON, DE
机构
[1] Solid State Electronics Center, Honey-well Inc., Hopkins
关键词
D O I
10.1109/T-ED.1969.16871
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A piezoresistive bridge and integrated circuit amplifier can be made in the same silicon cantilever. The purpose of the amplifier is to linearize as well as amplify the output. © 1969 IEEE. All rights reserved.
引用
收藏
页码:867 / +
页数:1
相关论文
共 3 条
[1]  
KELLER HW, PRIVATE COMMUNICATIO
[2]   SEMICONDUCTING STRESS TRANSDUCERS UTILIZING TRANSVERSE AND SHEAR PIEZORESISTANCE EFFECTS [J].
PFANN, WG ;
THURSTON, RN .
JOURNAL OF APPLIED PHYSICS, 1961, 32 (10) :2008-&
[3]   PIEZORESISTIVE PROPERTIES OF SILICON DIFFUSED LAYERS [J].
TUFTE, ON ;
STELZER, EL .
JOURNAL OF APPLIED PHYSICS, 1963, 34 (02) :313-&