ELECTROREFLECTANCE AND SEMICONDUCTOR SURFACE

被引:28
作者
SERAPHIN, BO
机构
[1] Michelson Laboratory, China Lake
关键词
D O I
10.1016/0039-6028(69)90244-1
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Periodic modulation of the potential barrier inside the reflecting surface of a semiconductor results in a synchronous modulation of the reflectance. This electroreflectance effect is a function of the surface potential and can therefore be used as a reference property. Calibration of this reference against surface conductance or surface capacity in the field-effect or electrolytic version of the method, respectively, establishes the functional relationship and suggests surface investigations by strictly optical means. Quantitative interpretation of electroreflectance spectra in band structure analysis requires control over the potential distribution in the various space-charge regions. In the electrolytic method, strict conditions for polarization and modulation must be satisfied to make line-shape discussions of electro-reflectance spectra meaningful. © 1969.
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页码:136 / &
相关论文
共 46 条
[31]   POTENTIAL DISTRIBUTION AND FORMATION OF SURFACE STATES AT SILICON-ELECTROLYTE INTERFACE [J].
MEMMING, R ;
SCHWANDT, G .
SURFACE SCIENCE, 1966, 5 (01) :97-&
[32]   OPTICAL-FIELD EFFECT ON THRESHOLDS SADDLE-POINT EDGES AND SADDLE-POINT EXCITIONS [J].
PHILLIPS, JC ;
SERAPHIN, BO .
PHYSICAL REVIEW LETTERS, 1965, 15 (03) :107-&
[33]   NONTENSORIAL ANISOTROPY OF OPTICAL FIELD EFFECT AT THRESHOLDS AND SADDLE-POINT EDGES [J].
PHILLIPS, JC .
PHYSICAL REVIEW, 1966, 146 (02) :584-&
[34]  
PIDGEON CR, 1967, 1967 P INT C 2 6 SEM, P1080
[35]  
PLESKOV YV, 1965, ELEKTROKHIMIYA, V1, P4
[36]   PIEZOELECTROREFLECTANCE IN GAAS [J].
POLLAK, FH ;
CARDONA, M ;
SHAKLEE, KL .
PHYSICAL REVIEW LETTERS, 1966, 16 (21) :942-&
[37]   ELECTROREFLECTANCE IN METALS [J].
PROSTAK, A ;
HANSEN, WN .
PHYSICAL REVIEW, 1967, 160 (03) :600-&
[38]   TRANSVERSE ELECTROREFLECTANCE [J].
REHN, V ;
KYSER, DS .
PHYSICAL REVIEW LETTERS, 1967, 18 (20) :848-&
[39]   FIELD EFFECT OF REFLECTANCE IN SILICON [J].
SERAPHIN, BO ;
BOTTKA, N .
PHYSICAL REVIEW LETTERS, 1965, 15 (03) :104-&
[40]   DETERMINATION OF SEMICONDUCTOR SURFACE PARAMETERS FROM ELECTROREFLECTANCE STUDIES [J].
SERAPHIN, BO .
SURFACE SCIENCE, 1967, 8 (04) :399-&