THERMOPOWER OF THIN IRON FILMS

被引:5
作者
SCHEPIS, R [1 ]
SCHRODER, K [1 ]
机构
[1] SYRACUSE UNIV,DEPT CHEM ENGN & MAT SCI,SYRACUSE,NY 13244
关键词
D O I
10.1016/0304-8853(92)91536-3
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Thin iron films were prepared by evaporation in a high vacuum system (pressure in the 10(-5) MPa range). The thermopower was measured in situ near room temperature as a function of film thickness. Iron films with rather high resistivity values showed a strong thickness effect of the Seebeck coefficient, S, with the difference between S (bulk) and S (film) reaching values of up to (19 +/- 3) mu-V/K for a sample 5 nm thick. The difference between S (bulk) and S (film) decreased with increasing d values. However, a sample with a resistance value of 50-mu-OMEGA cm at d = 5 nm had an S value which differed by less than 3-mu-V/K from S (bulk).
引用
收藏
页码:1757 / 1759
页数:3
相关论文
共 7 条
[1]   The conductivity of thin metallic films according to the electron theory of metals [J].
Fuchs, K .
PROCEEDINGS OF THE CAMBRIDGE PHILOSOPHICAL SOCIETY, 1938, 34 :100-108
[2]  
JUSTI E, 1951, Z NATURFORSCH A, V6, P544
[3]   ELECTRICAL-RESISTIVITY AND THERMOELECTRIC-POWER OF IRON FILMS [J].
PRASAD, RDG ;
RAO, GM ;
MOHAN, S .
JOURNAL OF MATERIALS SCIENCE LETTERS, 1990, 9 (06) :650-651
[4]   SURFACE-ROUGHNESS AND THE THERMOPOWER OF THIN-FILMS [J].
PREIST, TW ;
SAMBLES, JR .
VACUUM, 1983, 33 (10-1) :843-847
[5]   THE EFFECT OF DEPOSITION RATE ON THE ELECTRICAL-RESISTIVITY OF THIN MANGANESE FILMS [J].
SHIVAPRASAD, SM ;
ANGADI, MA .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1980, 13 (08) :L157-L159
[6]   THE MEAN FREE PATH OF ELECTRONS IN METALS [J].
SONDHEIMER, EH .
ADVANCES IN PHYSICS, 1952, 1 (01) :1-42
[7]   QUANTUM TRANSPORT AND SURFACE SCATTERING [J].
TESANOVIC, Z ;
JARIC, MV ;
MAEKAWA, S .
PHYSICAL REVIEW LETTERS, 1986, 57 (21) :2760-2763