INVESTIGATION OF SUBBAND-EDGE DISORDER IN A 2-DIMENSIONAL ELECTRON-GAS USING MAGNETIC DEPOPULATION

被引:1
作者
FLETCHER, R
HARRIS, JJ
FOXON, CT
机构
[1] UNIV LONDON IMPERIAL COLL SCI TECHNOL & MED, SEMICOND INTERDISCIPLINARY RES CTR, LONDON SW7 2BZ, ENGLAND
[2] UNIV NOTTINGHAM, DEPT PHYS, NOTTINGHAM N97 2RD, ENGLAND
关键词
D O I
10.1103/PhysRevB.49.4768
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The resistivity and thermopower of a high-mobility two-dimensional electron gas at a heterojunction have been measured as a function of in-plane magnetic field in the He-3 temperature range. The sharp negative peak previously found as the upper subband just empties is identified with phonon drag; at low temperatures it is replaced by a sharp positive peak which is due to diffusion thermopower. By assuming that the measured resistivity can be used to obtain the density of states of the upper subband, the form and magnitude of the diffusion peak can be calculated and the results are found to be in good agreement with experiment. This suggests that the density of states obtained in this way is quantitatively accurate and that the method gives a good measure of both the form of the disorder broadening, as well as the energy width. Following sample illumination, the phonon-drag peak is found to be time dependent, more so than any other quantity measured; this might suggest that the peak is connected with disorder, but we have no consistent explanation of the behavior. The effect of slight misalignment of the field on both the thermopower and resistivity has also been investigated.
引用
收藏
页码:4768 / 4774
页数:7
相关论文
共 25 条
[1]  
BEENAKKER CWJ, 1991, SOLID STATE PHYS, V44, P1
[2]   CHARACTERIZATION OF SOME CHIP RESISTORS AT LOW-TEMPERATURES [J].
BRIGGS, A .
CRYOGENICS, 1991, 31 (11) :932-935
[3]   THE EFFECT OF SUB-BAND STRUCTURE ON THE SIGN OF THE THERMOPOWER OF ELECTRONS IN A QUANTUM WELL [J].
CANTRELL, DG ;
BUTCHER, PN .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (20) :L587-L592
[4]   LIFETIME BROADENING OF SUB-BAND STRUCTURE IN THE ELECTRICAL-CONDUCTIVITY OF NARROW-CHANNEL SYSTEMS [J].
CANTRELL, DG ;
BUTCHER, PN .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (26) :5111-5125
[5]   THE EFFECT OF 2ND SUBBAND OCCUPATION ON THE THERMOPOWER OF A HIGH MOBILITY GAAS-AL0.33GA0.67AS HETEROJUNCTION [J].
FLETCHER, R ;
HARRIS, JJ ;
FOXON, CT .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1991, 6 (01) :54-58
[6]   EVIDENCE OF A MOBILITY EDGE IN THE 2ND SUBBAND OF AN AL0.33GA0.67AS-GAAS HETEROJUNCTION [J].
FLETCHER, R ;
ZAREMBA, E ;
DIORIO, M ;
FOXON, CT ;
HARRIS, JJ .
PHYSICAL REVIEW B, 1988, 38 (11) :7866-7869
[7]   PERSISTENT PHOTOCONDUCTIVITY AND 2-BAND EFFECTS IN GAAS/ALXGA1-XAS HETEROJUNCTIONS [J].
FLETCHER, R ;
ZAREMBA, E ;
DIORIO, M ;
FOXON, CT ;
HARRIS, JJ .
PHYSICAL REVIEW B, 1990, 41 (15) :10649-10666
[8]   WAVELENGTH-DEPENDENT PHOTOCONDUCTION EFFECTS ON THE 2ND SUBBAND OCCUPANCY IN (AL, GA)AS/GAAS HETEROJUNCTIONS [J].
HARRIS, JJ ;
LACKLISON, DE ;
FOXON, CT ;
SELTEN, FM ;
SUCKLING, AM ;
NICHOLAS, RJ ;
BARNHAM, KWJ .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1987, 2 (12) :783-789
[9]   ELECTRONIC-STRUCTURE OF GAAS-ALGAAS HETEROJUNCTIONS IN PARALLEL MAGNETIC-FIELDS [J].
HEISZ, JM ;
ZAREMBA, E .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (04) :575-584
[10]  
HEISZ JM, UNPUB