USE OF MOLECULAR-BEAM EPITAXY FOR THE ACHIEVEMENT OF LOW RESISTANCE INTER-CELL CONTACTS IN MULTIBAND GAP SOLAR-CELLS

被引：10

作者：

BOUCHAIB, P ^{[1
]}

CONTOUR, JP ^{[1
]}

RAYMOND, F ^{[1
]}

VERIE, C ^{[1
]}

DAVITAYA, FA ^{[1
]}

机构：

[1] CNRS,PHYS SOLIDE ENERGIE SOLAIRE GRP,F-92190 BELLEVUE,FRANCE

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1981年 / 19卷 / 02期

关键词：

D O I：

10.1116/1.571025

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：145 / 147

页数：3

共 19 条

[1] Bedair S. M., 1980, Fourteenth IEEE Photovoltaic Specialists Conference 1980, P337
[2] PROPERTIES OF P+-N+ ALGAAS DIODES
BEDAIR, SM
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (07) : 3935 - 3937
[3] 2-JUNCTION CASCADE SOLAR-CELL STRUCTURE
BEDAIR, SM
LAMORTE, MF
HAUSER, JR
[J]. APPLIED PHYSICS LETTERS, 1979, 34 (01) : 38 - 39
[4] Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9
[5] EPITAXY OF SILICON DOPED GALLIUM ARSENIDE BY MOLECULAR BEAM METHOD
CHO, AY
HAYASHI, I
[J]. METALLURGICAL TRANSACTIONS, 1971, 2 (03): : 777 - &
[6] CONTOUR JP, 1980, 8TH P INT VAC C CANN, P113
[7] Dupuis R. D., 1980, Fourteenth IEEE Photovoltaic Specialists Conference 1980, P1388
[8] Fraas L. M., 1978, Thirteenth IEEE Photovoltaic Specialists Conference1978, P886
[9] GIBART P, COMMUNICATION
[10] GALLIUM ARSENIDE TUNNEL DIODES
HOLONYAK, N
LESK, IA
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1960, 48 (08): : 1405 - 1409