PROPERTIES OF P+-N+ ALGAAS DIODES

被引：12

作者：

BEDAIR, SM

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1980年 / 51卷 / 07期

关键词：

D O I：

10.1063/1.328169

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：3935 / 3937

页数：3

相关论文

共 8 条

[1] ALGAAS TUNNEL-DIODE
BEDAIR, SM
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (11) : 7267 - 7268
[2] 2-JUNCTION CASCADE SOLAR-CELL STRUCTURE
BEDAIR, SM
LAMORTE, MF
HAUSER, JR
[J]. APPLIED PHYSICS LETTERS, 1979, 34 (01) : 38 - 39
[3] CLASSSEN RS, 1961, J APPL PHYS, V32, P2372
[4] HOLONYAK N, 1960, J APPL PHYS, V31, P130
[5] INTEGRATED MULTI-JUNCTION GAAS PHOTODETECTOR WITH HIGH OUTPUT VOLTAGE
ILEGEMS, M
SCHWARTZ, B
KOSZI, LA
MILLER, RC
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 629 - 631
[6] SYSTEM GA-AS-SN - INCORPORATION OF SN INTO GAAS
PANISH, MB
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (06) : 2659 - 2666
[7] SHIN KK, 1974, J ELECTRON MATER, V3, P391
[8] TELLURIUM-INDUCED DEFECTS IN LPE AL0.36GA0.64AS
WAGNER, WR
[J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (01) : 173 - 180