ALGAAS TUNNEL-DIODE

被引：22

作者：

BEDAIR, SM

机构：

[1] Research Triangle Institute, Research Triangle Park

来源：

JOURNAL OF APPLIED PHYSICS | 1979年 / 50卷 / 11期

关键词：

D O I：

10.1063/1.325809

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An AlGaAs tunnel diode with a band gap of 1.6 eV has been fabricated. This diode provides a suitable connecting junction between the high- and low-band gap cells of a cascade solar-cell structure operating at several hundred suns concentration without causing any appreciable loss in efficiency.

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页码：7267 / 7268

页数：2

相关论文

共 8 条

[1] 2-JUNCTION CASCADE SOLAR-CELL STRUCTURE [J].

BEDAIR, SM ;

LAMORTE, MF ;

HAUSER, JR .

APPLIED PHYSICS LETTERS, 1979, 34 (01) :38-39

[2]

BEDAIR SM, 1978, 154TH EL SOC M, P799

[3]

BEDAIR SM, 1978, INT ELECTRON DEVICES

[4] INTEGRATED MULTI-JUNCTION GAAS PHOTODETECTOR WITH HIGH OUTPUT VOLTAGE [J].

ILEGEMS, M ;

SCHWARTZ, B ;

KOSZI, LA ;

MILLER, RC .

APPLIED PHYSICS LETTERS, 1978, 33 (07) :629-631

[5]

Lamorte M. F., 1978, Thirteenth IEEE Photovoltaic Specialists Conference1978, P874

[6]

Moon R. L., 1978, Thirteenth IEEE Photovoltaic Specialists Conference1978, P859

[7] PROPERTIES OF GE-DOPED GAAS AND ALXGA1-XAS,SN-DOPED ALXGA1-XAS AND SI-TE-DOPED GAAS [J].

SHIH, KK ;

PETTIT, GD .

JOURNAL OF ELECTRONIC MATERIALS, 1974, 3 (02) :391-408

[8] TE AND GE - DOPING STUDIES IN GA1-XA1XAS [J].

SPRINGTHORPE, AJ ;

KING, FD ;

BECKE, A .

JOURNAL OF ELECTRONIC MATERIALS, 1975, 4 (01) :101-118