TELLURIUM-INDUCED DEFECTS IN LPE AL0.36GA0.64AS

被引：14

作者：

WAGNER, WR

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1978年 / 49卷 / 01期

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D O I：

10.1063/1.324318

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：173 / 180

页数：8

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[1] INTERDEPENDENCE OF STRAIN, PRECIPITATION, AND DISLOCATION FORMATION IN EPITAXIAL SE-DOPED GAAS
ABRAHAMS, MS
BLANC, J
BUIOCCHI, CJ
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (08) : 3277 - 3287
[2] ALXGA1-XAS1-Y'PY'-GAAS1-YPY HETEROSTRUCTURE LASER AND LAMP JUNCTIONS
BURNHAM, RD
HOLONYAK, N
SCIFRES, DR
[J]. APPLIED PHYSICS LETTERS, 1970, 17 (10) : 455 - &
[3] INFLUENCE OF SURFACE BAND BENDING ON INCORPORATION OF IMPURITIES IN SEMICONDUCTORS - TE IN GAAS
CASEY, HC
PANISH, MB
WOLFSTIRN, KB
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1971, 32 (03) : 571 - +
[4] HANSEN M, 1958, CONSTITUTION BINARY, P137
[5] HURLE DTJ, 1977, I PHYS C SER A, V33, P113
[6] NATURE OF DEFECTS IN N+ GALLIUM-ARSENIDE
HUTCHINSON, PW
DOBSON, PS
[J]. PHILOSOPHICAL MAGAZINE, 1974, 30 (01) : 65 - 73
[7] OPTICAL PROPERTIES OF N-TYPE GAAS .2. FORMATION OF EFFICIENT HOLE TRAPS DURING ANNEALING IN TE-DOPED GAAS
HWANG, CJ
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (11) : 4584 - &
[8] EFFECT OF HEAT TREATMENT ON PHOTOLUMINESCENCE OF TE DOPED GAAS
HWANG, CJ
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (04) : 1983 - &
[9] Kuznetsov G. M., 1973, Inorganic Materials, V9, P759
[10] ELECTRICAL AND ELECTRON MICROSCOPE STUDIES OF ANNEALING OF TELLURIUM-DOPED GALLIUM ARSENIDE
LAISTER, D
JENKINS, GM
[J]. PHILOSOPHICAL MAGAZINE, 1971, 23 (185): : 1077 - &