EFFECT OF HEAT TREATMENT ON PHOTOLUMINESCENCE OF TE DOPED GAAS

被引：26

作者：

HWANG, CJ

机构：

[1] Bell Telephone Laboratories Incorporated, Murray Hill

来源：

JOURNAL OF APPLIED PHYSICS | 1969年 / 40卷 / 04期

关键词：

D O I：

10.1063/1.1657885

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

[No abstract available]

引用

收藏

页码：1983 / &

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