The substitutionality of hafnium in sapphire by ion implantation and low temperature annealing

被引：5

作者：

Marques, JG

Melo, AA

Soares, JC

Alves, E

daSilva, MF

Freitag, K

机构：

[1] UNIV LISBON, CTR FIS NUCL, P-1699 LISBON, PORTUGAL

[2] INETI, ICEN, DEPT FIS, P-2685 SACAVEM, PORTUGAL

[3] INST STRAHLEN & KERNPHYS, D-53115 BONN, GERMANY

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1995年 / 106卷 / 1-4期

关键词：

D O I：

10.1016/0168-583X(95)00817-9

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Hafnium was implanted into sapphire at room temperature to a dose of 5 x 10(14) atoms/cm(2). The lattice location of Hf was studied by RBS/channeling and the recovery of isolated point defects was studied by hyperfine interactions. It is shown that after implantation Hf is substitutional in the Al sites and the lattice recovery of the point defects created during the implantation is achieved by furnace annealing at 350 and 550 degrees C.

引用

页码：602 / 605

页数：4

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