CRYSTAL-STRUCTURE AND BAND-GAP OF ALGAASN

[1] EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) : 341 - &

[2] SEMICONDUCTING AND OTHER MAJOR PROPERTIES OF GALLIUM-ARSENIDE [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) : R123 - R181

[3] CASEY HC, 1978, HETEROSTRUCTURE LA A

[4] CASEY HC, 1978, HETEROSTRUCTURE LA B

[5] GROWTH OF III-V SEMICONDUCTORS BY MOLECULAR-BEAM EPITAXY AND THEIR PROPERTIES [J]. THIN SOLID FILMS, 1983, 100 (04) : 291 - 317

[6] DONNELLY JP, 1977, I PHYS C SER B, V33, P166

[7] ELLIOTT KR, MRDC411162FR REP

[8] ON THE COLLAPSE OF DRAIN I-V-CHARACTERISTICS IN MODULATION-DOPED FETS AT CRYOGENIC TEMPERATURES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (08) : 1028 - 1032

[9] HIGH-PERFORMANCE GAAS METAL-INSULATOR SEMICONDUCTOR TRANSISTOR [J]. ELECTRON DEVICE LETTERS, 1982, 3 (04): : 104 - 105

[10] GOOCH CM, 1973, INJECTION ELECTROLUM, P40

[1] EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) : 341 - &

[2] SEMICONDUCTING AND OTHER MAJOR PROPERTIES OF GALLIUM-ARSENIDE [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) : R123 - R181

[3] CASEY HC, 1978, HETEROSTRUCTURE LA A

[4] CASEY HC, 1978, HETEROSTRUCTURE LA B

[5] GROWTH OF III-V SEMICONDUCTORS BY MOLECULAR-BEAM EPITAXY AND THEIR PROPERTIES [J]. THIN SOLID FILMS, 1983, 100 (04) : 291 - 317

[6] DONNELLY JP, 1977, I PHYS C SER B, V33, P166

[7] ELLIOTT KR, MRDC411162FR REP

[8] ON THE COLLAPSE OF DRAIN I-V-CHARACTERISTICS IN MODULATION-DOPED FETS AT CRYOGENIC TEMPERATURES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (08) : 1028 - 1032

[9] HIGH-PERFORMANCE GAAS METAL-INSULATOR SEMICONDUCTOR TRANSISTOR [J]. ELECTRON DEVICE LETTERS, 1982, 3 (04): : 104 - 105

[10] GOOCH CM, 1973, INJECTION ELECTROLUM, P40