LPE-GROWTH OF INP ON GAAS

被引：2

作者：

JACOBS, B ^{[1
]}

BUTTER, E ^{[1
]}

DOBNER, B ^{[1
]}

机构：

[1] KARL MARX UNIV,SEKT CHEM,DDR-701 LEIPZIG,GER DEM REP

来源：

KRISTALL UND TECHNIK-CRYSTAL RESEARCH AND TECHNOLOGY | 1978年 / 13卷 / 04期

关键词：

D O I：

10.1002/crat.19780130408

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：383 / 387

页数：5

共 13 条

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[2] LIQUIDUS ISOTHERMS FOR GA + IN + P MIXTURES
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[3] INDIUM-PHOSPHIDE .2. LIQUID EPITAXIAL-GROWTH
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[4] PHASE-EQUILIBRIA AND VAPOR-PRESSURES OF PURE PHOSPHORUS AND OF INDIUM-PHOSPHORUS SYSTEM AND THEIR IMPLICATIONS REGARDING CRYSTAL-GROWTH OF INP
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BUEHLER, E
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (06) : 835 - 846
[5] LPE-GROWTH OF INAS ON GAAS SUBSTRATES
BUTTER, E
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[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1974, 26 (02): : K105 - K107
[6] PHASE-DIAGRAMS OF COMPOUND SEMICONDUCTORS .4. SOLUBILITIES OF AIIIBV - COMPOUNDS IN METALS
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KUHN, G
[J]. JOURNAL OF THE LESS-COMMON METALS, 1974, 37 (02): : 310 - 312
[7] Mabbitt A. W., 1970, Journal of Materials Science, V5, P1043, DOI 10.1007/BF02403275
[8] NARITA SI, 1969, JPN J APPL PHYS, V8, P500, DOI 10.1143/JJAP.8.500B
[9] Panish M. B., 1972, PROGR SOLID STATE CH, V7, P39
[10] Panish M. B., 1970, J CHEM THERMODYN, V2, P319