LEED EVIDENCE FOR CARBON CONTAMINATION OF SI(311) SURFACE

[1] A STUDY OF NUCLEATION IN CHEMICALLY GROWN EPITAXIAL SILICON FILMS USING MOLECULAR BEAM TECHNIQUES .2. INITIAL GROWTH BEHAVIOUR ON CLEAN AND CARBON-CONTAMINATED SILICON SUBSTRATES [J]. PHILOSOPHICAL MAGAZINE, 1966, 14 (128): : 301 - &

[2] CHANG CC, 1969, STRUCTURE CHEMISTRY

[3] CARBON CONTAMINATION OF SI(111) SURFACES [J]. SURFACE SCIENCE, 1969, 15 (02) : 277 - &

[4] HECKINGBOTTOM R, 1969, 61 POST OFF RES DEP

[5] CHARACTERISTIC PROPERTIES OF SI(311) SURFACES [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1968, 7 (06) : 679 - &

[6] A LOW-ENERGY ELECTRON DIFFRACTION STUDY OF EPITAXIAL SILICON LAYERS ON A GE(111) SURFACE [J]. APPLIED PHYSICS LETTERS, 1967, 11 (10) : 330 - +

[7] WOLFF GA, 1964, CONDENSATION EVAPORA

[1] A STUDY OF NUCLEATION IN CHEMICALLY GROWN EPITAXIAL SILICON FILMS USING MOLECULAR BEAM TECHNIQUES .2. INITIAL GROWTH BEHAVIOUR ON CLEAN AND CARBON-CONTAMINATED SILICON SUBSTRATES [J]. PHILOSOPHICAL MAGAZINE, 1966, 14 (128): : 301 - &

[2] CHANG CC, 1969, STRUCTURE CHEMISTRY

[3] CARBON CONTAMINATION OF SI(111) SURFACES [J]. SURFACE SCIENCE, 1969, 15 (02) : 277 - &

[4] HECKINGBOTTOM R, 1969, 61 POST OFF RES DEP

[5] CHARACTERISTIC PROPERTIES OF SI(311) SURFACES [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1968, 7 (06) : 679 - &

[6] A LOW-ENERGY ELECTRON DIFFRACTION STUDY OF EPITAXIAL SILICON LAYERS ON A GE(111) SURFACE [J]. APPLIED PHYSICS LETTERS, 1967, 11 (10) : 330 - +

[7] WOLFF GA, 1964, CONDENSATION EVAPORA