SIGN OF CHI(3) IN POLYSILANE POLYMERS

被引：25

作者：

YANG, L

DORSINVILLE, R

ALFANO, RR

ZOU, WK

YANG, NL

机构：

[1] CUNY CITY COLL,DEPT PHYS,NEW YORK,NY 10031

[2] CUNY COLL STATEN ISL,DEPT CHEM,STATEN ISL,NY 10301

来源：

OPTICS LETTERS | 1991年 / 16卷 / 10期

关键词：

D O I：

10.1364/OL.16.000758

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The signs of the third-order optical nonlinear susceptibility chi(3) of polysilane have been determined to be negative at 532 nm and positive at 1064 nm from single-beam Z-scan measurements. The small and positive chi(3) at 1064 nm arises from the bound-electronic process. The negative chi(3) at 532 nm is attributed to two-photon absorption resonance transition.

引用

页码：758 / 760

页数：3

共 17 条

[1] TEMPERATURE-DEPENDENCE OF THE 3RD-ORDER NONLINEAR OPTICAL SUSCEPTIBILITIES IN POLYSILANES AND POLYGERMANES [J].