INSITU DEPOSITION OF EPITAXIAL PBZRXTI(1-X)O3 THIN-FILMS BY PULSED LASER DEPOSITION

Epitaxial thin films of PbZrxTi(1-x)O3 (PZT) with 0 less-than-or-equal-to x less-than-or-equal-to 0.6 have been deposited in situ by pulsed laser deposition from stoichiometric targets onto <100> oriented single crystals of MgO and SrTiO3. Film composition was extremely sensitive to the substrate temperature and the oxygen deposition pressure. In a high (200-300 mTorr) oxygen ambient, phase-pure <100> oriented PZT films (x = 0.54) were formed at a substrate temperature of 550-degrees-C on SrTiO3. On MgO, competition between formation of the ferroelectric phase and a nonferroelectric (pyrochlore) phase was observed for compositions near the morphotropic phase boundary (x approximately 0.54). Polycrystalline PZT films which were 70%-90% PZT were also deposited on Pt coated Si and GaAs under similar conditions.