CURRENT-VOLTAGE CHARACTERISTICS OF ALUMINUM NITRIDE FILMS FORMED BY RF GLOW-DISCHARGE

被引：7

作者：

MANGALARAJ, D

RADHAKRISHNAN, M

BALASUBRAMANIAN, C

KASILINGAM, AR

机构：

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1980年 / 13卷 / 06期

关键词：

D O I：

10.1088/0022-3727/13/6/001

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L101 / L105

页数：5

共 13 条

[1]

CHU TL, 1968, SOLID ST ELECTRON, V10, P1023

[2] ON PREPARATION OPTICAL PROPERTIES AND ELECTRICAL BEHAVIOUR OF ALUMINIUM NITRIDE [J].

COX, GA ;

CUMMINS, DO ;

KAWABE, K ;

TREDGOLD, RH .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (04) :543-&

[3] 3-DIMENSIONAL POOLE-FRENKEL EFFECT [J].

HARTKE, JL .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (10) :4871-&

[4]

Jonscher A. K., 1967, THIN SOLID FILMS, V1, P213

[5] PHOTO-CURRENTS IN SILICON MONOXIDE FILMS [J].

JONSCHER, AK ;

ANSARI, AA .

PHILOSOPHICAL MAGAZINE, 1971, 23 (181) :205-&

[6] ENERGY LOSSES IN HOPPING CONDUCTION AT HIGH ELECTRIC FIELDS [J].

JONSCHER, AK .

JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1971, 4 (11) :1331-&

[7]

JONSCHER AK, 1970, J PHYS C, V3, P1159

[8] PREPARATION AND STRUCTURAL PROPERTIES OF GAN THIN FILMS [J].

KOSICKI, BB ;

KAHNG, D .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1969, 6 (04) :593-&

[9] PROPERTIES OF ALUMINUM NITRIDE DERIVED DROM ALCL3 NH3 [J].

LEWIS, DW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (07) :978-&

[10] STRUCTURE OF A SILICON-CARBIDE FILM SYNTHESIZED BY RF REACTIVE ION PLATING [J].

MURAYAMA, Y ;

TAKAO, T .

THIN SOLID FILMS, 1977, 40 (JAN) :309-317

← 1 2 →