STRUCTURE OF A SILICON-CARBIDE FILM SYNTHESIZED BY RF REACTIVE ION PLATING

被引：34

作者：

MURAYAMA, Y

TAKAO, T

机构：

[1] TOYO UNIV,FAC ENGN,DEPT ELECT ENGN,KAWAGOE,SAITAMA,JAPAN

[2] ORIENT WATCH CO LTD,TOKYO,JAPAN

来源：

THIN SOLID FILMS | 1977年 / 40卷 / JAN期

关键词：

D O I：

10.1016/0040-6090(77)90132-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：309 / 317

页数：9

共 7 条

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[6] EPITAXIAL GROWTH OF SIC FILM ON SILICON SUBSTRATE AND ITS CRYSTAL STRUCTURE [J].

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[7] INFRARED PROPERTIES OF CUBIC SILICON CARBIDE FILMS [J].

SPITZER, WG ;

KLEINMAN, DA ;

FROSCH, CJ .

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