CHEMICAL PROCESSES IN SIC FORMATION BY REACTIVE DEPOSITION AND CHEMICAL CONVERSION

被引：18

作者：

HAQ, KE

LEARN, AJ

机构：

[1] NASA Electronics Research Center, Cambridge

来源：

JOURNAL OF APPLIED PHYSICS | 1969年 / 40卷 / 01期

关键词：

D O I：

10.1063/1.1657083

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

[No abstract available]

引用

收藏

页码：431 / &

相关论文

共 4 条

[1] GROWTH OF SINGLE-CRYSTAL FILMS OF CUBIC SILICON CARBIDE ON SILICON
KHAN, IH
SUMMERGRAD, RN
[J]. APPLIED PHYSICS LETTERS, 1967, 11 (01) : 12 - +
[2] LEARN AJ, UNPUBLISHED
[3] EPITAXIAL GROWTH OF SIC FILM ON SILICON SUBSTRATE AND ITS CRYSTAL STRUCTURE
NAKASHIMA, H
SUGANO, T
YANAI, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1966, 5 (10) : 874 - +
[4] INFRARED PROPERTIES OF CUBIC SILICON CARBIDE FILMS
SPITZER, WG
KLEINMAN, DA
FROSCH, CJ
[J]. PHYSICAL REVIEW, 1959, 113 (01): : 133 - 136