DOPING-INDUCED BANDWIDTH ENHANCEMENT IN METAL-SEMICONDUCTOR METAL PHOTODETECTORS

被引：12

作者：

BURROUGHES, JH ^{[1
]}

ROGERS, DL ^{[1
]}

ARJAVALINGAM, G ^{[1
]}

PETTIT, GD ^{[1
]}

GOORSKY, MS ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1991年 / 3卷 / 07期

关键词：

D O I：

10.1109/68.87945

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate a novel technique for enhancing metal-semiconductor-metal photodetector bandwidths without reducing responsivity. We have observed bandwidth increases of up to 10 GHz from control to enhanced photodectors which corresponds to about 70% enhancement. This technique involves modifying the internal electric field structure, by introducing a buried n-type doped layer that is completely depleted, to reduce the relatively long hole transit time.

引用

页码：657 / 659

页数：3

共 8 条

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[4] MOONEY PM, 1990, J APPL PHYS, V67, P1
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[7] ROGERS DL, 1990, NOV P LEOS 90
[8] HIGH-SPEED METAL-SEMICONDUCTOR-METAL WAVE-GUIDE PHOTODETECTOR ON INP
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