INFLUENCE OF THE SPIN-ORBIT SPLIT-OFF VALENCE BAND IN INXGA1-XAS/ALYGA1-YAS STRAINED-LAYER QUANTUM-WELLS

被引：11

作者：

GIL, B

HOWARD, LK

DUNSTAN, DJ

BORING, P

LEFEBVRE, P

机构：

[1] UNIV SURREY,STRAINED LAYER STRUCT RES GRP,GUILDFORD GU2 5XH,SURREY,ENGLAND

[2] UNIV SURREY,DEPT PHYS,GUILDFORD GU2 5XH,SURREY,ENGLAND

来源：

PHYSICAL REVIEW B | 1992年 / 45卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.45.3906

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Quantum-well ground and excited states are observed using wavelength-modulated reflectivity in InxGa1-xAs/AlyGa1-yAs single-quantum-well structures. To account for the dependence of their energies on indium and aluminum concentrations, we find that it is necessary to include the coupling between the light-hole GAMMA(8) valence band and the spin-orbit split-off GAMMA(7) valence band. The calculation is performed using a two-band envelope-function approximation, and good agreement with experiment is obtained.

引用

页码：3906 / 3909

页数：4

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