CRITICAL VOLUME FRACTION OF CRYSTALLINITY FOR CONDUCTIVITY PERCOLATION IN PHOSPHORUS-DOPED SI-F-H ALLOYS

[1] BRODSKY MH, 1977, PHYS REV B, V16, P3556, DOI 10.1103/PhysRevB.16.3556

[2] LANDRETH RE, 1979, EPA600279056, P1

[3] EVIDENCE OF VOIDS WITHIN AS-DEPOSITED STRUCTURE OF GLASSY SILICON [J]. PHYSICAL REVIEW LETTERS, 1969, 23 (20) : 1167 - &

[4] CRITICAL DENSITY IN PERCOLATION PROCESSES [J]. JOURNAL OF CHEMICAL PHYSICS, 1970, 53 (09) : 3759 - &

[5] ELECTROREFLECTANCE AND RAMAN-SCATTERING INVESTIGATION OF GLOW-DISCHARGE AMORPHOUS SI-F-H [J]. SOLID STATE COMMUNICATIONS, 1980, 36 (09) : 817 - 822

[6] Tsu R., 1981, Defects in Semiconductors. Proceedings of the Materials Research Society Annual Meeting, P445

[7] TSU R, 1981, 9TH INT C PHYS AM LI

[8] Zallen R., 1979, Fluctuation phenomena, P177

[1] BRODSKY MH, 1977, PHYS REV B, V16, P3556, DOI 10.1103/PhysRevB.16.3556

[2] LANDRETH RE, 1979, EPA600279056, P1

[3] EVIDENCE OF VOIDS WITHIN AS-DEPOSITED STRUCTURE OF GLASSY SILICON [J]. PHYSICAL REVIEW LETTERS, 1969, 23 (20) : 1167 - &

[4] CRITICAL DENSITY IN PERCOLATION PROCESSES [J]. JOURNAL OF CHEMICAL PHYSICS, 1970, 53 (09) : 3759 - &

[5] ELECTROREFLECTANCE AND RAMAN-SCATTERING INVESTIGATION OF GLOW-DISCHARGE AMORPHOUS SI-F-H [J]. SOLID STATE COMMUNICATIONS, 1980, 36 (09) : 817 - 822

[6] Tsu R., 1981, Defects in Semiconductors. Proceedings of the Materials Research Society Annual Meeting, P445

[7] TSU R, 1981, 9TH INT C PHYS AM LI

[8] Zallen R., 1979, Fluctuation phenomena, P177