IMPROVED RATE-EQUATIONS FOR EXTERNAL CAVITY SEMICONDUCTOR-LASERS

被引：20

作者：

HUI, RQ

TAO, SP

机构：

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1989年 / 25卷 / 06期

关键词：

D O I：

10.1109/3.29296

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：1580 / 1583

页数：4

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