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INTERNAL LOSS OF INGAASP-INP BURIED CRESCENT (LAMDA = 1.3 MU-M) LASER
被引:5
作者
:
HIGUCHI, H
论文数:
0
引用数:
0
h-index:
0
HIGUCHI, H
NAMIZAKI, H
论文数:
0
引用数:
0
h-index:
0
NAMIZAKI, H
OOMURA, E
论文数:
0
引用数:
0
h-index:
0
OOMURA, E
HIRANO, R
论文数:
0
引用数:
0
h-index:
0
HIRANO, R
SAKAKIBARA, Y
论文数:
0
引用数:
0
h-index:
0
SAKAKIBARA, Y
SUSAKI, W
论文数:
0
引用数:
0
h-index:
0
SUSAKI, W
FUJIKAWA, K
论文数:
0
引用数:
0
h-index:
0
FUJIKAWA, K
机构
:
来源
:
APPLIED PHYSICS LETTERS
|
1982年
/ 41卷
/ 04期
关键词
:
D O I
:
10.1063/1.93521
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:320 / 321
页数:2
相关论文
共 11 条
[1]
THE TEMPERATURE-DEPENDENCE OF THE EFFICIENCY AND THRESHOLD CURRENT OF IN1-XGAXASYP1-Y LASERS RELATED TO INTERVALENCE BAND ABSORPTION
ADAMS, AR
论文数:
0
引用数:
0
h-index:
0
ADAMS, AR
ASADA, M
论文数:
0
引用数:
0
h-index:
0
ASADA, M
SUEMATSU, Y
论文数:
0
引用数:
0
h-index:
0
SUEMATSU, Y
ARAI, S
论文数:
0
引用数:
0
h-index:
0
ARAI, S
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1980,
19
(10)
: L621
-
L624
[2]
CASEY HC, 1978, HETEROSTRUCTURE LASE, pCH3
[3]
DUTTA NK, 1981, APPL PHYS LETT, V38, P407, DOI 10.1063/1.92380
[4]
TEMPERATURE SENSITIVE THRESHOLD CURRENT OF INGAASP-INP DOUBLE HETEROSTRUCTURE LASERS
HORIKOSHI, Y
论文数:
0
引用数:
0
h-index:
0
机构:
The Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation, Tokyo, Musashino-shi
HORIKOSHI, Y
FURUKAWA, Y
论文数:
0
引用数:
0
h-index:
0
机构:
The Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation, Tokyo, Musashino-shi
FURUKAWA, Y
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1979,
18
(04)
: 809
-
815
[5]
THRESHOLD DEPENDENCE ON ACTIVE-LAYER THICKNESS IN INGAASP-INP DH LASERS
NAHORY, RE
论文数:
0
引用数:
0
h-index:
0
NAHORY, RE
POLLACK, MA
论文数:
0
引用数:
0
h-index:
0
POLLACK, MA
[J].
ELECTRONICS LETTERS,
1978,
14
(23)
: 727
-
729
[6]
MIRROR COATING OF ALGAAS TJS']JS LASERS BY AN SI-SIO2 REFLECTOR
OHSAWA, J
论文数:
0
引用数:
0
h-index:
0
OHSAWA, J
ISHII, M
论文数:
0
引用数:
0
h-index:
0
ISHII, M
IKEDA, K
论文数:
0
引用数:
0
h-index:
0
IKEDA, K
HIRANO, R
论文数:
0
引用数:
0
h-index:
0
HIRANO, R
SUSAKI, W
论文数:
0
引用数:
0
h-index:
0
SUSAKI, W
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1980,
19
(10)
: 2025
-
2026
[7]
LOW THRESHOLD INGAASP-INP BURIED CRESCENT LASER WITH DOUBLE CURRENT CONFINEMENT STRUCTURE
OOMURA, E
论文数:
0
引用数:
0
h-index:
0
OOMURA, E
MUROTANI, T
论文数:
0
引用数:
0
h-index:
0
MUROTANI, T
HIGUCHI, H
论文数:
0
引用数:
0
h-index:
0
HIGUCHI, H
NAMIZAKI, H
论文数:
0
引用数:
0
h-index:
0
NAMIZAKI, H
SUSAKI, W
论文数:
0
引用数:
0
h-index:
0
SUSAKI, W
[J].
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1981,
17
(05)
: 646
-
650
[8]
ADDITIONAL DATA ON EFFECT OF DOPING ON LASING CHARACTERISTICS OF GAAS-ALX GA1-XAS DOUBLE-HETEROSTRUCTURE LASERS
PINKAS, E
论文数:
0
引用数:
0
h-index:
0
机构:
TECHNION ISRAEL INST TECHNOL,HAIFA,ISRAEL
PINKAS, E
MILLER, BI
论文数:
0
引用数:
0
h-index:
0
机构:
TECHNION ISRAEL INST TECHNOL,HAIFA,ISRAEL
MILLER, BI
HAYASHI, I
论文数:
0
引用数:
0
h-index:
0
机构:
TECHNION ISRAEL INST TECHNOL,HAIFA,ISRAEL
HAYASHI, I
FOY, PW
论文数:
0
引用数:
0
h-index:
0
机构:
TECHNION ISRAEL INST TECHNOL,HAIFA,ISRAEL
FOY, PW
[J].
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1973,
QE 9
(02)
: 281
-
282
[9]
BAND-TO-BAND AUGER RECOMBINATION EFFECT ON INGAASP LASER THRESHOLD
SUGIMURA, A
论文数:
0
引用数:
0
h-index:
0
SUGIMURA, A
[J].
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1981,
17
(05)
: 627
-
635
[10]
NONRADIATIVE CARRIER LOSS AND TEMPERATURE SENSITIVITY OF THRESHOLD IN 1.27 MU-M (GALN)(ASP)-INP DH LASERS
THOMPSON, GHB
论文数:
0
引用数:
0
h-index:
0
THOMPSON, GHB
HENSHALL, GD
论文数:
0
引用数:
0
h-index:
0
HENSHALL, GD
[J].
ELECTRONICS LETTERS,
1980,
16
(01)
: 42
-
44
←
1
2
→
共 11 条
[1]
THE TEMPERATURE-DEPENDENCE OF THE EFFICIENCY AND THRESHOLD CURRENT OF IN1-XGAXASYP1-Y LASERS RELATED TO INTERVALENCE BAND ABSORPTION
ADAMS, AR
论文数:
0
引用数:
0
h-index:
0
ADAMS, AR
ASADA, M
论文数:
0
引用数:
0
h-index:
0
ASADA, M
SUEMATSU, Y
论文数:
0
引用数:
0
h-index:
0
SUEMATSU, Y
ARAI, S
论文数:
0
引用数:
0
h-index:
0
ARAI, S
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1980,
19
(10)
: L621
-
L624
[2]
CASEY HC, 1978, HETEROSTRUCTURE LASE, pCH3
[3]
DUTTA NK, 1981, APPL PHYS LETT, V38, P407, DOI 10.1063/1.92380
[4]
TEMPERATURE SENSITIVE THRESHOLD CURRENT OF INGAASP-INP DOUBLE HETEROSTRUCTURE LASERS
HORIKOSHI, Y
论文数:
0
引用数:
0
h-index:
0
机构:
The Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation, Tokyo, Musashino-shi
HORIKOSHI, Y
FURUKAWA, Y
论文数:
0
引用数:
0
h-index:
0
机构:
The Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation, Tokyo, Musashino-shi
FURUKAWA, Y
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1979,
18
(04)
: 809
-
815
[5]
THRESHOLD DEPENDENCE ON ACTIVE-LAYER THICKNESS IN INGAASP-INP DH LASERS
NAHORY, RE
论文数:
0
引用数:
0
h-index:
0
NAHORY, RE
POLLACK, MA
论文数:
0
引用数:
0
h-index:
0
POLLACK, MA
[J].
ELECTRONICS LETTERS,
1978,
14
(23)
: 727
-
729
[6]
MIRROR COATING OF ALGAAS TJS']JS LASERS BY AN SI-SIO2 REFLECTOR
OHSAWA, J
论文数:
0
引用数:
0
h-index:
0
OHSAWA, J
ISHII, M
论文数:
0
引用数:
0
h-index:
0
ISHII, M
IKEDA, K
论文数:
0
引用数:
0
h-index:
0
IKEDA, K
HIRANO, R
论文数:
0
引用数:
0
h-index:
0
HIRANO, R
SUSAKI, W
论文数:
0
引用数:
0
h-index:
0
SUSAKI, W
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1980,
19
(10)
: 2025
-
2026
[7]
LOW THRESHOLD INGAASP-INP BURIED CRESCENT LASER WITH DOUBLE CURRENT CONFINEMENT STRUCTURE
OOMURA, E
论文数:
0
引用数:
0
h-index:
0
OOMURA, E
MUROTANI, T
论文数:
0
引用数:
0
h-index:
0
MUROTANI, T
HIGUCHI, H
论文数:
0
引用数:
0
h-index:
0
HIGUCHI, H
NAMIZAKI, H
论文数:
0
引用数:
0
h-index:
0
NAMIZAKI, H
SUSAKI, W
论文数:
0
引用数:
0
h-index:
0
SUSAKI, W
[J].
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1981,
17
(05)
: 646
-
650
[8]
ADDITIONAL DATA ON EFFECT OF DOPING ON LASING CHARACTERISTICS OF GAAS-ALX GA1-XAS DOUBLE-HETEROSTRUCTURE LASERS
PINKAS, E
论文数:
0
引用数:
0
h-index:
0
机构:
TECHNION ISRAEL INST TECHNOL,HAIFA,ISRAEL
PINKAS, E
MILLER, BI
论文数:
0
引用数:
0
h-index:
0
机构:
TECHNION ISRAEL INST TECHNOL,HAIFA,ISRAEL
MILLER, BI
HAYASHI, I
论文数:
0
引用数:
0
h-index:
0
机构:
TECHNION ISRAEL INST TECHNOL,HAIFA,ISRAEL
HAYASHI, I
FOY, PW
论文数:
0
引用数:
0
h-index:
0
机构:
TECHNION ISRAEL INST TECHNOL,HAIFA,ISRAEL
FOY, PW
[J].
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1973,
QE 9
(02)
: 281
-
282
[9]
BAND-TO-BAND AUGER RECOMBINATION EFFECT ON INGAASP LASER THRESHOLD
SUGIMURA, A
论文数:
0
引用数:
0
h-index:
0
SUGIMURA, A
[J].
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1981,
17
(05)
: 627
-
635
[10]
NONRADIATIVE CARRIER LOSS AND TEMPERATURE SENSITIVITY OF THRESHOLD IN 1.27 MU-M (GALN)(ASP)-INP DH LASERS
THOMPSON, GHB
论文数:
0
引用数:
0
h-index:
0
THOMPSON, GHB
HENSHALL, GD
论文数:
0
引用数:
0
h-index:
0
HENSHALL, GD
[J].
ELECTRONICS LETTERS,
1980,
16
(01)
: 42
-
44
←
1
2
→