ANGULAR MOMENTUM THEORY AND LOCALIZED STATS IN SOLIDS - INVESTIGATION OF SHALLOW ACCEPTOR STATES IN SEMICONDUCTORS

被引:113
作者
LIPARI, NO
BALDERESCHI, A
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D O I
10.1103/PhysRevLett.25.1660
中图分类号
O4 [物理学];
学科分类号
0702 ;
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页码:1660 / +
页数:1
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共 19 条
[1]   SPECTROSCOPIC INVESTIGATION OF ACCEPTOR STATES IN ALUMINUM ANTIMONIDE [J].
AHLBURN, BT ;
RAMDAS, AK .
PHYSICAL REVIEW, 1969, 187 (03) :932-&
[2]  
BALDERESCHI A, TO BE PUBLISHED
[3]   BAND STRUCTURES AND PSEUDOPOTENTIAL FORM FACTORS FOR 14 SEMICONDUCTORS OF DIAMOND AND ZINC-BLENDE STRUCTURES [J].
COHEN, ML ;
BERGSTRESSER, TK .
PHYSICAL REVIEW, 1966, 141 (02) :789-+
[4]   OPTICAL PROPERTIES OF GROUP 4 ELEMENTS CARBON AND SILICON IN GALLIUM PHOSPHIDE [J].
DEAN, PJ ;
FROSCH, CJ ;
HENRY, CH .
JOURNAL OF APPLIED PHYSICS, 1968, 39 (12) :5631-&
[5]  
Edmonds A. R., 1960, ANGULAR MOMENTUM QUA
[6]   HIGHER DONOR EXCITED STATES FOR PROLATE-SPHEROID CONDUCTION BANDS - A REEVALUATION OF SILICON AND GERMANIUM [J].
FAULKNER, RA .
PHYSICAL REVIEW, 1969, 184 (03) :713-&
[7]   OPTICAL AND MAGNETO-OPTICAL ABSORPTION EFFECTS OF GROUP-III IMPURITIES IN GERMANIUM [J].
FISHER, P ;
FAN, HY .
PHYSICAL REVIEW LETTERS, 1959, 2 (11) :456-458
[8]   EXCITATION SPECTRA OF GROUP 3 IMPURITIES IN GERMANIUM [J].
JONES, RL ;
FISHER, P .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1965, 26 (07) :1125-&
[9]   THEORY OF DONOR AND ACCEPTOR STATES IN SILICON AND GERMANIUM [J].
KITTEL, C ;
MITCHELL, AH .
PHYSICAL REVIEW, 1954, 96 (06) :1488-1493
[10]   THEORY OF ACCEPTOR LEVELS IN GERMANIUM [J].
KOHN, W ;
SCHECHTER, D .
PHYSICAL REVIEW, 1955, 99 (06) :1903-1904