RADIATION HARDNESS OF SI STRIP DETECTORS WITH INTEGRATED COUPLING CAPACITORS

被引：6

作者：

DIJKSTRA, H

HORISBERGER, R

HUBBELING, L

MAEHLUM, G

PEISERT, A

WEILHAMMER, P

TUUVA, T

EVENSEN, L

机构：

[1] UNIV HELSINKI,SF-00100 HELSINKI 10,FINLAND

[2] SI,OSLO,NORWAY

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1989年 / 36卷 / 01期

关键词：

D O I：

10.1109/23.34506

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：591 / 592

页数：2

相关论文

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HANSEN, TE
HORISBERGER, R
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PEISERT, A
TUUVA, T
WEILHAMMER, P
ZALEWSKA, A
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[2] RADIATION-DAMAGE IN SILICON STRIP DETECTORS
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[3] DIJKSTRA H, 1988, CONTRIBUTION 1988 SU
[4] RECENT DEVELOPMENT OF DETECTORS WITH INTEGRATED CAPACITORS AND POLYSILICON RESISTORS
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MAEHLUM, G
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TUUVA, T
WEILHAMMER, P
ZALEWSKA, A
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1988, 35 (01) : 428 - 431
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[6] NICOLLIAN EH, 1982, MOS PHYSICS TECHNOLO
[7] OHSUGI T, 1987, KEK8722 PREPR
[8] INPRESS 1ST RESULTS