RADIATION-DAMAGE IN SILICON STRIP DETECTORS

被引:24
作者
DIETL, H
GOOCH, T
KELSEY, D
KLANNER, R
LOFFLER, A
PEPE, M
WICKENS, F
机构
[1] CERN,CH-1211 GENEVA 23,SWITZERLAND
[2] RUTHERFORD APPLETON LAB,DIDCOT OX11 0QX,OXON,ENGLAND
[3] UNIV BRISTOL,BRISTOL BS8 1TH,AVON,ENGLAND
[4] UNIV HAMBURG,D-2000 HAMBURG 13,FED REP GER
[5] DESY,D-2000 HAMBURG 52,FED REP GER
关键词
D O I
10.1016/0168-9002(87)90533-X
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
引用
收藏
页码:460 / 466
页数:7
相关论文
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