THE EFFECT OF RADIATION ON THE ENERGY RESOLUTION OF ION-IMPLANTED SILICON DETECTORS

被引：22

作者：

BORGEAUD, P ^{[1
]}

MCEWEN, JG ^{[1
]}

RANCOITA, PG ^{[1
]}

SEIDMAN, A ^{[1
]}

机构：

[1] CERN, CH-1211 GENEVA 23, SWITZERLAND

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH | 1983年 / 211卷 / 2-3期

关键词：

D O I：

10.1016/0167-5087(83)90260-0

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：363 / 367

页数：5

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SCOTT, RE .

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[10] THEORETICAL AND EXPERIMENTAL DETERMINATIONS OF NEUTRON ENERGY DEPOSITION IN SILICON [J].

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