RADIATION EFFECTS OF PROTONS + ELECTRONS IN SILICON DIFFUSED-JUNCTION DETECTORS

被引：12

作者：

SCOTT, RE

机构：

来源：

关键词：

D O I：

10.1109/TNS.1964.4323424

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：206 / +

页数：1

共 21 条

[1]

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[2]

BABCOCK RV, 1961, IRE T NUCLEAR SCI, VNS8, P98

[3] A NEW PARAMAGNETIC CENTER IN ELECTRON IRRADIATED SILICON [J].

BEMSKI, G ;

WRIGHT, K ;

SZYMANSKI, B .

[4]

BILLINGTON DS, 1961, RADIATION DAMAGE SOL

[5]

CLELAND, 1961, RADIAT DAMAGE SOLIDS, P332

CORBETT, JW ;

WATKINS, GD .

[7]

DEARNALEY G, 1963, IEEE T NUCL SCI, VNS10, P106

[8]

GEORGE G, TO BE PUBLISHED

[9]

GUNNERSEN EM, PRIVATE COMMUNICATIO

[10] ELECTRON BOMBARDMENT OF SILICON [J].

HILL, DE .

PHYSICAL REVIEW, 1959, 114 (06) :1414-1420