SILICON-INTERSTITIAL OXYGEN-INTERSTITIAL COMPLEX AS A MODEL OF THE 450-DEGREES-C OXYGEN THERMAL DONOR IN SILICON

被引：25

作者：

DEAK, P

SNYDER, LC

CORBETT, JW

机构：

[1] SUNY ALBANY, DEPT CHEM, ALBANY, NY 12222 USA

[2] SUNY ALBANY, DEPT PHYS, ALBANY, NY 12222 USA

来源：

PHYSICAL REVIEW LETTERS | 1991年 / 66卷 / 06期

关键词：

D O I：

10.1103/PhysRevLett.66.747

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The complex of a divalent silicon interstitial and a pair of adjacent oxygen interstitials is proposed as the core of the 450-degrees-C oxygen thermal donor in silicon. The proposal is supported by theoretical calculations which suggest that this complex is stable relative to the self-interstitial and two separated oxygen interstitials, and that it has a doubly occupied level close to the computed conduction-band edge. The calculated spin distribution is in qualitative agreement with the one found experimentally for the NL8 center.

引用

页码：747 / 749

页数：3

共 15 条

[1]

BRELOT A, 1973, RAD DAMAGE DEFECTS S, P191

[2] EVALUATION OF SEMIEMPIRICAL QUANTUM-CHEMICAL METHODS IN SOLID-STATE APPLICATIONS .2. CYCLIC-CLUSTER CALCULATIONS OF SILICON [J].