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STRUCTURE OF THE 0.767-EV OXYGEN-CARBON LUMINESCENCE DEFECT IN 450-DEGREES-C THERMALLY ANNEALED CZOCHRALSKI-GROWN SILICON

被引：62
作者：
KURNER, W
SAUER, R
DORNEN, A
THONKE, K
机构：
来源：
PHYSICAL REVIEW B | 1989年 / 39卷 / 18期
关键词：
D O I：
10.1103/PhysRevB.39.13327
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：13327 / 13337
页数：11
相关论文
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