共 41 条
[2]
KINETICS OF ACCUMULATION OF RADIATION DEFECTS AND ANNIHILATION OF VACANCIES AND INTERSTITIALS IN CARBON-CONTAINING AND BORON-CONTAINING SILICON
[J].
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH,
1982, 72 (01)
:61-68
[3]
Bean A. R., 1970, Solid State Communications, V8, P175, DOI 10.1016/0038-1098(70)90074-8
[4]
ELECTRON-IRRADIATION DAMAGE IN SILICON CONTAINING HIGH-CONCENTRATIONS OF BORON
[J].
JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS,
1972, 5 (04)
:379-&
[5]
EPR OF A JAHN-TELLER DISTORTED (111) CARBON INTERSTITIALLY IN IRRADIATED SILICON
[J].
PHYSICAL REVIEW B,
1974, 9 (06)
:2607-2617
[6]
BROWER KL, 1985, COMMUNICATION
[7]
INTERSTITIAL DEFECTS INVOLVING CARBON IN IRRADIATED SILICON
[J].
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS,
1975, 8 (02)
:243-248
[8]
CHENG LJ, 1969, J APPL PHYS, V40, P1679, DOI 10.1063/1.1657265
[9]
DEFECTS IN IRRADIATED SILICON .2. INFRARED ABSSORPTION OF SI-A CENTER
[J].
PHYSICAL REVIEW,
1961, 121 (04)
:1015-&
[10]
PRODUCTION OF DIVACANCIES AND VACANCIES BY ELECTRON IRRADIATION OF SILICON
[J].
PHYSICAL REVIEW,
1965, 138 (2A)
:A555-&