KINETICS OF ACCUMULATION OF RADIATION DEFECTS AND ANNIHILATION OF VACANCIES AND INTERSTITIALS IN CARBON-CONTAINING AND BORON-CONTAINING SILICON

被引：13

作者：

AKHMETOV, VD

BOLOTOV, VV

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1982年 / 72卷 / 01期

关键词：

D O I：

10.1002/pssa.2210720103

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：61 / 68

页数：8

共 12 条

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[2] THE EFFECT OF CARBON AND BORON ON THE ACCUMULATION OF VACANCY-OXYGEN COMPLEXES IN SILICON [J].

AKHMETOV, VD ;

BOLOTOV, VV .

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[3] ELECTRON IRRADIATION DAMAGE IN SILICON CONTAINING CARBON AND OXYGEN [J].

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[4]

BOLOTOV VV, 1980, PROBLEMS RAD TECHNOL

[5]

BOLOTOV VV, 1976, FIZ TEKH POLUPROV, V10, P1187

[6]

BRELOT A, 1972, ETUDE DANS SILICON I

[7] INTERSTITIAL DEFECTS INVOLVING CARBON IN IRRADIATED SILICON [J].

BROZEL, MR ;

NEWMAN, RC ;

TOTTERDELL, DHJ .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1975, 8 (02) :243-248

[8]

KHOLODAR GA, 1976, FIZ TEKH POLUPROV, V10, P1712

[9] INTERSTITIAL DEFECTS INVOLVING BORON IN IRRADIATED SILICON [J].

LAITHWAITE, K ;

NEWMAN, RC ;

TOTTERDELL, DHJ .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1975, 8 (02) :236-242

[10] CARBON INTERSTITIAL IN ELECTRON-IRRADIATED SILICON [J].

LEE, YH ;

CHENG, LJ ;

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CORBETT, JW .

SOLID STATE COMMUNICATIONS, 1977, 21 (01) :109-111

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